KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 68
KFM2G16Q2M-DEB5
Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KFM2G16Q2M-DEB5.pdf
(124 pages)
- Current page: 68 of 124
- Download datasheet (2Mb)
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
3.4.3.1 Unlocked NAND Array Write Protection State
An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using
the appropriate software command. (locked-tight state can be achieved via lock-tight command which follows lock command)
Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be
changed with new lock command. Therefore, each block has its own lock/unlock/lock-tight state.
3.4.3.2 Locked NAND Array Write Protection State
A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked
blocks can be changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or
locked-tight using the appropriate software command.
Unlocked
Locked
68
Unlock Command Sequence:
Start block address+Unlock block command (0023h)
Lock Command Sequence:
Start block address+Lock block command (002Ah)
FLASH MEMORY
Related parts for KFM2G16Q2M-DEB5
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
K4D551638F-TC50Samsung semiconductor [256Mbit GDDR SDRAM]
Manufacturer:
Samsung
Datasheet:
Part Number:
Description:
K5A3280YBC-T755Samsung semiconductor [MCP MEMORY]
Manufacturer:
Samsung
Datasheet:
Part Number:
Description:
LOW VOLTAGE AUDIO AMPLIFIER
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
1 Chip CODEC for Digital Answering phone
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
10/15 CH PLL
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
BALLAST CONTROL IC
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
Part Number:
Description:
Transistor,mosfet,n-channel,200v V Br Dss,5.9a
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet: