KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 97

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
Invalid Block Table Creation Flow Chart
3.15.2 Invalid Block Replacement Operation
Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification report for
the actual data.
The following possible failure modes should be considered to implement a highly reliable system.
In the case of a status read failure after erase or program, a block replacement should be done. Because program status failure
during a page program does not affect the data of the other pages in the same block, a block replacement can be executed with a
page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced
block.
Block Failure Modes and Countermeasures
Increment Block Address
Single Bit Failure in Load Operation
Invalid Block(s) Table
Program Failure
Failure Mode
Erase Failure
Create (or update)
No
No
Set Block Address = 0
Last Block ?
"FFFFh" ?
Check
Start
End
97
Status Read after Program --> Block Replacement
Status Read after Erase --> Block Replacement
Yes
Yes
Detection and Countermeasure sequence
Error Correction by ECC mode of the device
*
in 1st and 2nd page of every block
Check "FFFFh" at the 1st word of sector 0
FLASH MEMORY