KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 111

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note: 1) Bootcode copy operation starts 400us later than POR activation.
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
6.9
2) 1K bytes Bootcode copy takes 70us(estimated) from sector0 and sector1/page0/block0 of NAND Flash array to BootRAM.
3) INT register goes ‘Low’ to ‘High’ on the condition of ‘Bootcode-copy done’ and RP rising edge.
System Power
MuxOneNAND
The system power should reach Vcc after POR triggering level(typ. 1.5V) within 400us for valid boot code data.
Host can read Bootcode in BootRAM(1K bytes) after Bootcode copy completion.
If RP goes ‘Low’ to ‘High’ before ‘Bootcode-copy done’, INT register goes to ‘Low’ to ‘High’ as soon as ‘Bootcode-copy done’
INTpol bit
Operation
IOBE bit
POR triggering level
INT bit
Cold Reset Timing
INT
RP
Sleep
1)
111
0 (default)
1 (default)
0 (default)
Bootcode copy
High-Z
2)
Bootcode - copy done
FLASH MEMORY
Idle
1
1
3)