KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 80

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
3.10
There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase.
3.10.1 Block Erase Operation
The device can be erased one block at a time. To erase a block is to write all 1's into the desired memory block by executing the Inter-
nal Erase Routine. All previous data is lost.
Block Erase Operation Flow Chart
Erase Operation
See Timing Diagram 6.8
Add: F100h DQ=DFS*, FBA
Write 0 to interrupt register
Write ’DFS*, FBA’ of Flash
Add: F240h DQ[10]=Error
Add: F241h DQ=[15]=INT
Write ’Erase’ Command
Add: F241h DQ=0000h
Add: F220h DQ=0094h
* DFS is for DDP
low to high transition
Wait for INT register
Erase completed
Read Controller
Status Register
DQ[10]=0?
Start
YES
*
80
: If erase operation results in an error, map out
the failing block and replace it with another block.
Erase Error
NO
FLASH MEMORY