KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 104

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
5.7
5.8 AC Characteristics for Load/Program/Erase Performance
Sector Load time(Note 1)
Page Load time(Note 1)
Sector Program time(Note 1)
Page Program time(Note 1)
OTP Access Time(Note 1)
Lock/Unlock/Lock-tight Time(Note 1)
Erase Suspend Time(Note 1)
Erase Resume Time(Note 1)
Number of Partial Program Cycles in the sector (Including main and
spare area)
Block Erase time (Note 1)
Multi BlocK Erase Verify Read time(Note 1)
WE Cycle Time
AVD low pulse width
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
WE Pulse Width High
WE Disable to AVD Enable
CE Low to RDY Valid
AC Characteristics for Asynchronous Write/Load/
Program/Erase Operation
See Timing Diagrams 6.5, 6.6, 6.7, and 6.8
See Timing Diagrams 6.6, 6.7, and 6.8
Parameter
Parameter
2~64 Blocks
2~64 Blocks
1 Block
1 Block
Symbol
104
t
t
t
t
t
t
t
NOP
BERS1
BERS2
t
t
PGM1
PGM2
t
LOCK
t
t
ERS1
ERS2
RD1
RD2
OTP
ESP
RD3
Symbol
t
t
t
AAVDS
AAVDH
t
t
t
t
AVDP
t
t
t
WPH
WEA
t
t
WPL
CER
WC
DS
DH
CS
CH
Min
-
-
-
-
-
-
-
-
-
-
-
-
Min
70
12
30
40
30
15
5
7
0
0
0
-
Typ
205
220
500
500
400
23
30
70
FLASH MEMORY
2
4
2
4
-
Max
15
-
-
-
-
-
-
-
-
-
-
-
Max
720
750
700
700
500
100
35
45
3
6
2
3
6
Unit
cycles
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
ms
ns
ns
µs
µs
µs
µs
µs
µs