KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 78
![no-image](/images/no-image-200.jpg)
KFM2G16Q2M-DEB5
Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KFM2G16Q2M-DEB5.pdf
(124 pages)
- Current page: 78 of 124
- Download datasheet (2Mb)
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
The Copy-Back steps shown in the flow chart are:
• Data is read from the NAND Array using Flash Block Address (FBA), Flash Page Address (FPA) and
• The BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA) identifies how many sectors
• The destination address in the NAND Array is written using the Flash Copy-Back Block Address (FCBA),
• The Copy-Back Program command is issued to start programming.
• Upon completion of copy-back programming to the destination page address, the Host checks the status
Flash Sector Address (FSA). FBA, FPA, and FSA identify the source address to read data from NAND Flash array.
and the location of the sectors in DataRAM that are used.
Flash Copy-Back Page Address (FCPA), and Flash Copy-Back Sector Address (FCSA).
to see if the operation was successfully completed. If there was an error, map out the block including the
page in error and copy the target data to another block.
78
FLASH MEMORY
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