KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 79

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
3.9.1
The Copy-Back Program Operation with Random Data Input in MuxOneNAND consists of 2 phase, Load data into DataRAM, Modify
data and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by
the host, then programmed into the destination page.
As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load
operation. Therefore, using hardware ECC of MuxOneNAND, accumulation of 1 bit error can be avoided.
Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of
source page to destination page while it is being copied.
Copy-Back Program Operation with Random Data Input Flow Chart
Write ’BSA, BSC’ of DataRAM
Write 0 to interrupt register
Add: F200h DQ=BSA, BSC
Add: F100h DQ=DFS, FBA
Write ’DFS*, FBA’ of Flash
Add: F107h DQ=FPA, FSA
Add: F240h DQ[10]=Error
Write ’FPA, FSA’ of Flash
* DBS, DFS is for DDP
Select DataRAM for DDP
Add: F241h DQ[15]=INT
Write ’Load’ Command
Add: F241h DQ=0000h
low to high transition
Copy-Back Program Operation with Random Data Input
Add: F101h DQ=DBS
Wait for INT register
DQ=0000h or 0013h
Status Register
Read Controller
Add: F220h
Start
Write 0 to interrupt register
Add: F107h DQ=FPA, FSA
Write ’Program’ Command
Add: F240h DQ[10]=Error
Add: Random Address in
Write ’FPA, FSA’ of Flash
Add: F241h DQ[15]=INT
Add: F241h DQ=0000h
Copy back completed
low to high transition
Add: F100h DQ=FBA
Write ’FBA’ of Flash
Wait for INT register
DQ=0080h or 001Ah
Random Data Input
Selected DataRAM
Read Controller
Status Register
Add: F220h
DQ[10]=0?
DQ[10]=0?
DQ=Data
79
YES
YES
NO
FLASH MEMORY
Copy back Error
Map Out
NO