KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 101

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
5.0
5.1
5.2
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
5.3
NOTES:
1. The
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block.
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
factory-marked bad blocks.
Input Capacitance
Control Pin Capacitance
Output Capacitance
INT Capacitance
Valid Block Number
V
0V
CC
device
V
CC
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
Item
/2
AC CHARACTERISTICS
AC Test Conditions
Valid Block Characteristics
Device Capacitance
Parameter
Input Pulse and Test Point
(T
A
Input & Output
= 25 °C, V
Test Point
Parameter
Symbol
Single
DDP
CLK
other inputs
C
CC
C
C
C
OUT
IN1
IN2
INT
= 1.8V, f = 1.0MHz)
Symbol
Test Condition
V
N
CC
VB
V
V
/2
V
V
OUT
OUT
IN
IN
=0V
=0V
=0V
=0V
101
1004
2008
Min
Min
Device
Under
Test
-
-
-
-
Single
Output Load
Typ.
Max
10
10
10
15
-
-
* C
L
= 30pF including scope
and Jig capacitance
C
FLASH MEMORY
0V to V
Min
L
Value
V
-
-
-
-
3ns
5ns
= 30pF
CC
1024
2048
Max
/2
DDP
CC
.
Do not erase or program
Max
20
20
20
30
Blocks
Blocks
Unit
Unit
pF
pF
pF
pF