KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 120

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
7.1.3
Because the pull-up resistor value is related to tr(INT) an appropriate value can obtained with the following reference charts.
Determining Rp Value
Internal Vcc
~50k ohm
Ibusy
tr[us]
tf[ns]
Ibusy
tr[us]
tf[ns]
INT
0.161
0.089
1.75
8.73
1.75
3.77
1K
1K
KFG1G16Q2M @ Vcc = 1.8V, Ta = 25
KFN2G16Q2M @ Vcc = 1.8V, Ta = 25
0.7727
1.238
10K
0.18
8.73
0.18
3.77
10K
INT pol = ’High’
Rp
1.345
20K
20K
0.09
1.97
8.73
0.09
3.77
Ready Vcc
Rp(ohm)
Rp(ohm)
2.458
1.788
30K
30K
0.06
8.73
0.06
3.77
120
2.807
0.045
2.142
0.045
40K
tf
40K
8.73
3.77
VOL
°C , C
°C , C
2.431
0.036
8.73
0.036
3.77
50K
50K
3.07
L
L
= 30pF
= 30pF
Vss
Busy State
FLASH MEMORY
Open(100K)
Open(100K)
3.785
5.420
0.000
0.000
tr
VOH