KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 90

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
OTP Lock Operation Flow Chart
* DBS, DFS is for DDP
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NAND Flash Array address map.
Write ’OTP Access’ Command
Write ’DFS’, ’FBA’ of Flash
Write 0 to interrupt register
Add: F100h DQ=DFS, FBA
Write Data into DataRAM
Select DataRAM for DDP
Add: F241h DQ[15]=INT
in spare0/sector0/page0
Add: F241h DQ=0000h
Add: F220h DQ=0065h
Add: F101h DQ=DBS*
low to high transition
Wait for INT register
Add: 8th Word
DQ=XXXCh
Start
2)
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90
Write ’BSA, BSC’ of DataRAM
Write 0 to interrupt register
Automatically
Write ’FPA, FSA’ of Flash
Write Program command
Add: F241h DQ[15]=INT
Add: F107h DQ=0000h
Add: F200h DQ=0001h
Add: F100h DQ=FBA
Add: F241h DQ=0000h
updated
low to high transition
Write ’FBA’ of Flash
DQ=0080h or 001Ah
Wait for INT register
OTP lock completed
Update Controller
Status Register
DQ[6]=1(OTP
Do Cold reset
Add: F220h
Add: F240h
FLASH MEMORY
L
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