KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 5

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
1.2
1.3
Samsung offers a variety of Flash solutions including NAND Flash, MuxOneNAND
both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Device Type
M : Single Chip
N : Dual Chip
Density
1G : 1Gb
2G : 2Gb
Samsung
MuxOneNAND Mem-
Organization
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
x16 Organization
Erase Suspend/Resume
Lock/Unlock/Lock-Tight
Application Requires
Fast Sequential Read
Fast Random Read
Fast Write/Program
Multi Block Erase
Copyback
Scalability
Flash Product Type Selector
Ordering Information
ECC
K F M 1G 1 6 Q 2 M - D E B 5
External (Hardware/Software)
• (EDC)
NAND
•
•
•
5
Samsung Flash Products
• (Max 64 Blocks)
MuxOneNAND
™
• (ECC)
Internal
and NOR Flash. Samsung offers Flash products
•
•
•
•
•
™
Operating Temperature Range
E = Extended Temp. (-30 °C to 85 °C)
FLASH MEMORY
Package
D : FBGA(Lead Free)
Page Architecture
Version
2 : 2KB Page
1st Generation
Speed
Product Line desinator
5 : 54MHz
6 : 66MHz
B : Include Bad Block
D : Daisy Sample
NOR
X
•
•
•
•