MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 109

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Table 28: AC Characteristics: Normal Operation (3.3V)
Note 1 applies to all
Table 29: AC Characteristics: Normal Operation (1.8V)
Note 1 applies to all
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Parameter
ALE to RE# delay
CE# access time
CE# HIGH to output High-Z
CLE to RE# delay
CE# HIGH to output hold
Output High-Z to RE# LOW
READ cycle time
RE# access time
RE# HIGH hold time
RE# HIGH to output hold
RE# HIGH to WE# LOW
RE# HIGH to output High-Z
RE# LOW to output hold
RE# pulse width
Ready to RE# LOW
Reset time (READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
Parameter
ALE to RE# delay
CE# access time
CE# HIGH to output High-Z
CLE to RE# delay
CE# HIGH to output hold
Output High-Z to RE# LOW
READ cycle time
RE# access time
RE# HIGH hold time
RE# HIGH to output hold
RE# HIGH to WE# LOW
Notes:
1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
3. The first time the RESET (FFh) command is issued while the device is idle, the device will
sampled and not 100% tested.
go busy for a maximum of 1ms. Thereafter, the device goes busy for a maximum of 5µs.
Electrical Specifications – AC Characteristics and Operating
Symbol
t
Symbol
t
t
t
RHOH
t
RLOH
t
t
t
t
t
t
t
RHW
t
WHR
COH
t
RHOH
t
t
CEA
CHZ
REA
REH
RHZ
t
CLR
t
t
t
RST
WB
t
t
t
t
t
t
RHW
AR
RC
RP
RR
COH
t
CEA
CHZ
t
REA
REH
IR
CLR
t
AR
RC
IR
109
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
100
Min
10
10
15
20
15
10
20
60
100
10
10
15
25
10
15
2Gb: x8, x16 NAND Flash Memory
–
–
0
–
7
–
5
–
–
0
–
–
–
5/10/500
Max
Max
100
100
25
50
16
25
50
22
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
© 2009 Micron Technology, Inc. All rights reserved.
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Conditions
Notes
Notes
2
2
3
2