MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 124

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Revision History
Rev. H, Production – 9/10
Rev. G, Preliminary – 8/10
Rev. F, Preliminary – 6/10
Rev. E, Advance – 5/10
Rev. D, Advance – 3/10
Rev. C, Advance – 1/10
Rev. B, Advance – 9/09
Rev. A, Advance – 7/09
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
• From preliminary to production status
• Corrected errors in bytes 44–63 in Parameter Page Data Structure Table
• Added block endurance info back in to Parameter Page Data Structure Table
• Added part numbers to document
• Removed Endurance spec from Features and Parameter Page Data Structure Table
• Updated values in Parameter Page Data Structure Table
• Corrected commands in OTP operations
• Replaced Status Register Definition table with the correct one for ECC
• Updated value for byte 113 to 01h; value for byte 114 to 0Eh in Parameter Page Data
• Updated note 6 in Electrical Specifications – Program/Erase Characteristics to say
• Fixed note typo in Features
• Removed unsupported part numbers from Parameter Page Data Structure Tables and
• Removed Boot Block
• Updated "Internal Data Move with Internal ECC Enabled" graphic spec from
• Updated "Internal Data Move with Random Data Input with Internal ECC Enabled"
• Updated Boot Block Operation to include dual-plane restrictions
• Added
• Added note for
• Moved note from
• Initial release
Structure Tables
"disabled"
added new ones
t
graphic spec from
gram/Erase Characteristics
R_ECC
t
RCBSY spec to Electrical Specifications - Program/Erase Characteristics
t
PROG and
t
t
RHW to
R to
t
R_ECC
t
t
124
PROG_ECC specifications to Electrical Specifications - Pro-
RHZ in AC Characteristics and Operating Conditions
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
© 2009 Micron Technology, Inc. All rights reserved.
Revision History
t
R to