MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 110

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MT29F2G08ABAEAH4-IT:E

Manufacturer Part Number
MT29F2G08ABAEAH4-IT:E
Description
IC FLASH 2G 3.3V SLC 63VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAH4-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
2Gb
Interface Type
Parallel
Address Bus
28b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

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Table 29: AC Characteristics: Normal Operation (1.8V) (Continued)
Note 1 applies to all
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Parameter
RE# HIGH to output High-Z
RE# LOW to output hold
RE# pulse width
Ready to RE# LOW
Reset time (READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
Notes:
1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
3. The first time the RESET (FFh) command is issued while the device is idle, the device will
sampled and not 100% tested.
be busy for a maximum of 1ms. Thereafter, the device is busy for a maximum of 5µs.
Electrical Specifications – AC Characteristics and Operating
Symbol
t
t
RLOH
t
WHR
t
t
RHZ
t
t
RST
WB
RP
RR
110
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
12
20
80
2Gb: x8, x16 NAND Flash Memory
3
5/10/500
Max
100
65
© 2009 Micron Technology, Inc. All rights reserved.
Unit
ns
ns
ns
ns
µs
ns
ns
Conditions
Notes
2
3

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