MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 95

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Figure 73: TWO-PLANE INTERNAL DATA MOVE
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
R/B#
R/B#
I/Ox
I/Ox
1
00h
85h
Address (5 cycles)
1st-plane source
2nd-plane destination
Address (5 cycles)
00h
10h
Address (5 cycles)
2nd-plane source
t PROG
70h
35h
95
Status
t R
Micron Technology, Inc. reserves the right to change products or specifications without notice.
85h
2Gb: x8, x16 NAND Flash Memory
1st-plane destination
Address (5 cycles)
Two-Plane Operations
11h
© 2009 Micron Technology, Inc. All rights reserved.
t DBSY
1