MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 16

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MT29F2G08ABAEAH4-IT:E

Manufacturer Part Number
MT29F2G08ABAEAH4-IT:E
Description
IC FLASH 2G 3.3V SLC 63VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAH4-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
2Gb
Interface Type
Parallel
Address Bus
28b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON
Quantity:
2 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
MT29F2G08ABAEAH4-IT:E
0
Company:
Part Number:
MT29F2G08ABAEAH4-IT:E
Quantity:
9 800
Device and Array Organization
Figure 9: Array Organization – MT29F2G08 (x8)
Table 2: Array Addressing – MT29F2G08 (x8)
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Second
Fourth
Cycle
Third
Fifth
First
Cache Register
Data Register
1024 blocks
2048 blocks
per device
per plane
BA15
LOW
LOW
CA7
BA7
I/07
(0, 2, 4, 6, ..., 2044, 2046)
Notes:
even-numbered blocks
Plane of
2048
2048
1 block
1. Block address concatenated with page address = actual page address. CAx = column ad-
2. If CA11 is 1, then CA[10:6] must be 0.
3. BA6 controls plane selection.
BA14
LOW
LOW
I/06
CA6
BA6
dress; PAx = page address; BAx = block address.
2112 bytes
64
64
BA13
LOW
LOW
I/05
CA5
PA5
(1, 3, 5, 7, ..., 2045, 2047)
odd-numbered blocks
2048
2048
1 block
Plane of
2112 bytes
BA12
LOW
LOW
CA4
I/04
PA4
16
64
64
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CA11
BA11
LOW
CA3
2Gb: x8, x16 NAND Flash Memory
I/03
PA3
1 page
1 block
1 plane
1 device = 1056Mb x 2 planes
Device and Array Organization
DQ0
DQ7
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= (128K + 4K) bytes x 1024 blocks
= 1056Mb
= 2112Mb
CA10
BA10
LOW
I/02
CA2
PA2
© 2009 Micron Technology, Inc. All rights reserved.
LOW
I/01
CA1
CA9
PA1
BA9
BA16
CA0
CA8
BA8
I/00
PA0

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