MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 48

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

READ STATUS (70h)
Figure 30: READ STATUS (70h) Operation
READ STATUS ENHANCED (78h)
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
The READ STATUS (70h) command returns the status of the last-selected die (LUN) on
a target. This command is accepted by the last-selected die (LUN) even when it is busy
(RDY = 0).
If there is only one die (LUN) per target, the READ STATUS (70h) command can be used
to return status following any NAND command.
In devices that have more than one die (LUN) per target, during and following inter-
leaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command
must be used to select the die (LUN) that should report status. In this situation, using
the READ STATUS (70h) command will result in bus contention, as two or more die
(LUNs) could respond until the next operation is issued. The READ STATUS (70h) com-
mand can be used following all single-die (LUN) operations.
Cycle type
The READ STATUS ENHANCED (78h) command returns the status of the addressed die
(LUN) on a target even when it is busy (RDY = 0). This command is accepted by all die
(LUNs), even when they are BUSY (RDY = 0).
Writing 78h to the command register, followed by three row address cycles containing
the page, block, and LUN addresses, puts the selected die (LUN) into read status mode.
The selected die (LUN) stays in this mode until another valid command is issued. Die
(LUNs) that are not addressed are deselected to avoid bus contention.
The selected LUN's status is returned when the host requests data output. The RDY and
ARDY bits of the status register are shared for all planes on the selected die (LUN). The
FAILC and FAIL bits are specific to the plane specified in the row address.
The READ STATUS ENHANCED (78h) command also enables the selected die (LUN) for
data output. To begin data output following a READ-series operation after the selected
die (LUN) is ready (RDY = 1), issue the READ MODE (00h) command, then begin data
output. If the host needs to change the cache register that will output data, use the RAN-
DOM DATA READ TWO-PLANE (06h-E0h) command after the die (LUN) is ready.
Use of the READ STATUS ENHANCED (78h) command is prohibited during the power-
on RESET (FFh) command and when OTP mode is enabled. It is also prohibited follow-
ing some of the other reset, identification, and configuration operations. See individual
operations for specific details.
I/O[7:0]
Command
70h
t
WHR
48
D
SR
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
© 2009 Micron Technology, Inc. All rights reserved.
Status Operations