MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 78

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Table 16: Block Lock Address Cycle Assignments
Figure 57: UNLOCK Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
ALE Cycle
First
Second
Third
I/O[15:8]
LOW
LOW
LOW
Notes:
1
WE#
R/B#
BA15
LOW
I/Ox
WP#
CE#
ALE
RE#
I/O7
CLE
BA7
1. I/O[15:8] is applicable only for x16 devices.
2. Invert area bit is applicable for 24h command; it may be LOW or HIGH for 23h command.
Unlock
BA14
LOW
I/O6
BA6
23h
add 1
Block
BA13
LOW
LOW
I/O5
Lower boundary
add 2
Block
78
BA12
LOW
LOW
I/O4
Block
add 3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
BA11
LOW
LOW
I/O3
24h
BA10
LOW
LOW
I/O2
add 1
Block
Upper boundary
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
add 2
Block
BA17
LOW
I/O1
BA9
add 3
Block
Invert area bit
BA16
I/O0
BA8
2