MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 98

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MT29F2G08ABAEAH4-IT:E

Manufacturer Part Number
MT29F2G08ABAEAH4-IT:E
Description
IC FLASH 2G 3.3V SLC 63VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAH4-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
2Gb
Interface Type
Parallel
Address Bus
28b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON
Quantity:
2 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
MT29F2G08ABAEAH4-IT:E
0
Company:
Part Number:
MT29F2G08ABAEAH4-IT:E
Quantity:
9 800
Figure 76: TWO-PLANE BLOCK ERASE
Figure 77: TWO-PLANE/MULTIPLE-DIE READ STATUS Cycle
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
WE#
I/Ox
CE#
ALE
RE#
CLE
60h
Address input (3 cycles)
1st plane
78h
D1h
Optional
t DBSY
Address (3 cycles)
60h
98
Address input (3 cycles)
2nd plane
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
t WHR
D0h
t AR
Two-Plane Operations
t BERS
t REA
© 2009 Micron Technology, Inc. All rights reserved.
Status output
or 78h
70h
Status
Don‘t Care

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