MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 82

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Figure 62: BLOCK LOCK Flowchart
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
LOCK Cmd
WP# LOW
>100ns or
with invert area
UNLOCK Cmd
bit = 1
Locked tight range
Unlocked range
Unlocked range
Unlocked range
Unlocked range
Locked range
Entire NAND Flash
array locked tight
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
Entire NAND Flash
UNLOCK Cmd with invert area bit = 1
UNLOCK Cmd with invert area bit = 0
array locked
Power-up with
LOCK HIGH
UNLOCK Cmd with
invert area bit = 1
82
LOCK Cmd
WP# LOW
>100ns or
Power-up
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Locked tight range
Locked-tight range
Unlocked range
Unlocked range
Locked range
Locked range
UNLOCK Cmd with
invert area bit = 0
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
Power-up with
LOCK LOW
(default)
BLOCK LOCK function
UNLOCK Cmd with
invert area bit = 0
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
disabled