MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 119

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MT29F2G08ABAEAH4-IT:E

Manufacturer Part Number
MT29F2G08ABAEAH4-IT:E
Description
IC FLASH 2G 3.3V SLC 63VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAH4-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
2Gb
Interface Type
Parallel
Address Bus
28b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON
Quantity:
2 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
MT29F2G08ABAEAH4-IT:E
0
Company:
Part Number:
MT29F2G08ABAEAH4-IT:E
Quantity:
9 800
Figure 89: READ ID Operation
Figure 90: PROGRAM PAGE Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
RDY
WE#
I/Ox
ALE
CLE
CE#
RE#
WE#
ALE
CE#
RE#
CLE
I/Ox
80h
t
WC
90h
add 1
Address, 1 cycle
Col
00h or 20h
add 2
Col
add 1
Row
t
WHR
t
AR
add 2
Row
t
REA
Byte 0
add 3
Row
t
ADL
119
1 up to m byte
D
Asynchronous Interface Timing Diagrams
N
serial Input
IN
Byte 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
M
IN
2Gb: x8, x16 NAND Flash Memory
Byte 2
10h
t
WB
t
PROG_ECC
t
PROG or
Byte 3
© 2009 Micron Technology, Inc. All rights reserved.
Byte 4
70h
t
WHR
Don’t Care
Status

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