MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 35

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Table 7: READ ID Parameters for Address 00h (Continued)
Table 8: READ ID Parameters for Address 20h
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Internal ECC
Byte value
Byte
0
1
2
3
4
Undefined
Options
“O”
“N”
“F”
“I”
Note:
Note:
I/07
1. b = binary; h = hexadecimal.
1. h = hexadecimal.
0
0
0
0
X
Options
ECC disabled
ECC enabled
MT29F2G08ABBEA
MT29F2G16ABBEA
MT29F2G08ABAEA
MT29F2G16ABAEA
I/06
X
1
1
1
1
I/05
X
0
0
0
0
I/07
0
1
0
0
0
0
35
I/04
X
0
0
0
0
I/06
0
0
0
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I/05
I/03
0
0
0
0
2Gb: x8, x16 NAND Flash Memory
X
1
1
0
1
I/04
0
0
0
0
I/02
READ ID Parameter Tables
1
1
1
0
X
I/03
0
0
0
0
I/02
I/01
1
1
1
1
© 2009 Micron Technology, Inc. All rights reserved.
X
1
1
1
0
I/01
1
1
1
1
I/00
X
1
0
0
1
I/00
0
0
0
0
Value
Value
XXh
4Fh
4Eh
46h
49h
06h
06h
06h
06h
0b
1b
1
1