HD6417708RF100A Renesas Electronics America, HD6417708RF100A Datasheet - Page 211

IC SUPERH MPU ROMLESS 144LQFP

HD6417708RF100A

Manufacturer Part Number
HD6417708RF100A
Description
IC SUPERH MPU ROMLESS 144LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet

Specifications of HD6417708RF100A

Core Processor
SH-2
Core Size
32-Bit
Speed
100MHz
Connectivity
EBI/EMI, SCI, SmartCard
Peripherals
POR, WDT
Number Of I /o
8
Program Memory Type
ROMless
Voltage - Supply (vcc/vdd)
3.15 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Ram Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417708RF100A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD6417708RF100A
Manufacturer:
HITACHI/日立
Quantity:
20 000
Part Number:
HD6417708RF100AV
Manufacturer:
RENESAS
Quantity:
1 000
Part Number:
HD6417708RF100AV
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Table 10.1 Pin Configuration (Preliminary) (cont)
Pin Name
Data enable 0
Data enable 1
Data enable 2
Data enable 3
Read
Wait
16-bit I/O
Clock enable
Bus release
request
Bus release
acknowledgment
Area 0 bus width,
PCMCIA card
select
Endian switching/
low address strobe
Notes: 1. MD3/CE2A input/output switching is performed by BCR1.A5PCM. Output is selected
2. MD4/CE2B input/output switching is performed by BCR1.A6PCM. Output is selected
3. MD5/RAS2 input/output switching is performed by BCR1.DRAMTP. Output is selected
when BCR1.A5PCM = 1.
when BCR1.A6PCM = 1.
when BCR1.DRAMTP (2–0) = 101.
Signal
DQMLL/WE0
DQMLU/WE1
DQMUL/WE2/
ICIORD
DQMUU/WE3/
ICIOWR
RD
WAIT
IOIS16
CKE
BREQ
BACK
MD3/CE2A*
MD4/CE2B*
MD5/RAS2*
1
2
3
,
I/O
O
O
O
O
O
I
I
O
I
O
I/O
I/O
Description
When synchronous DRAM is used, selects D7–D0.
For other memory, D7–D0 write strobe signal.
When synchronous DRAM is used, selects D15–D8.
When PCMCIA is used, strobe signal that indicates
the write cycle. For other memory, D15–D8 write
strobe signal.
When synchronous DRAM is used, selects D23–
D16. For other memory, D23–D16 write strobe
signal. For PCMCIA, strobe signal indicating I/O
read.
When synchronous DRAM is used, selects D31–
D24. For other memory, D31–D24 write strobe
signal. For PCMCIA, strobe signal indicating I/O
write.
Strobe signal indicating read cycle
Wait state request signal (synchronous signal)
Signal indicating PCMCIA 16-bit I/O. Valid only in
little-endian mode. (Fix low in big-endian mode.)
Connected to clock enable control signal of
synchronous DRAM
Bus release request signal
Bus release acknowledge signal
Signal controlling bus width of physical space area
0. When PCMCIA is used, CE2A and CE2B.
Signal setting endian for all spaces on reset. When
area 2 DRAM is connected, area 2 DRAM RAS
signal
191

Related parts for HD6417708RF100A