HD6417708RF100A Renesas Electronics America, HD6417708RF100A Datasheet - Page 289

• Manufacturer Part Number: HD6417708RF100A
• Description: IC SUPERH MPU ROMLESS 144LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of HD6417708RF100A

• Core Processor: SH-2
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: EBI/EMI, SCI, SmartCard
• Peripherals: POR, WDT
• Number Of I /o: 8
• Program Memory Type: ROMless
• Voltage - Supply (vcc/vdd): 3.15 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Ram Size: -
• Program Memory Size: -
• Data Converters: -

Power-On Sequence: In order to use synchronous DRAM, mode setting must first be performed
after powering on. To perform synchronous DRAM initialization correctly, the bus state controller
registers must first be set, followed by a write to the synchronous DRAM mode register. In
synchronous DRAM mode register setting, the address signal value at that time is latched by a
combination of the RAS, CAS, and RD/WR signals. If the value to be set is X, the bus state
controller provides for value X to be written to the synchronous DRAM mode register by
performing a write to address H'FFFFD000 + X for area 2 synchronous DRAM, and to address
H'FFFFE000 + X for area 3 synchronous DRAM. In this operation the data is ignored, but the
mode write is performed as a byte-size access. To set burst read/write, CAS latency 1 to 3, wrap
type = sequential, and burst length 1 supported by the SH7708 Series, arbitrary data is written in a
byte-size access to the following addresses:
Mode register setting timing is shown in figure 10.32.
As a result of the write to address H'FFFFD000 + X or H'FFFFE000 + X, a precharge all banks
(PALL) command is first issued in the TRp1 cycle, then a mode register write command is issued
in the TMw1 cycle.
Before mode register setting, a 100 µs idle time (depending on the memory manufacturer) must be
guaranteed after powering on requested by the synchronous DRAM. If the reset signal pulse width
is greater than this idle time, there is no problem in performing mode register setting immediately.
The number of dummy auto-refresh cycles specified by the manufacturer (usually 8) or more must
be executed. This is usually achieved automatically through various initialization methods after
auto-refresh setting. However, a more dependable method is to set a short refresh request
generation interval just as these dummy cycles are being executed. With simple read or write
access, the address counter in the synchronous DRAM used for auto-refreshing is not initialized,
and so the cycle must always be an auto-refresh cycle.
CAS latency 1
CAS latency 2
CAS latency 3
Area 2
FFFFD840
FFFFD880
FFFFD8C0
Area 3
FFFFE840
FFFFE880
FFFFE8C0
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