D17760BP200ADV Renesas Electronics America, D17760BP200ADV Datasheet - Page 400

MPU 3V 8K,PB-FREE, 256-BGA

D17760BP200ADV

Manufacturer Part Number
D17760BP200ADV
Description
MPU 3V 8K,PB-FREE, 256-BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of D17760BP200ADV

Core Processor
SH-4
Core Size
32-Bit
Speed
200MHz
Connectivity
Audio Codec, CAN, EBI/EMI, FIFO, I²C, MFI, MMC, SCI, Serial Sound, SIM, SPI, USB
Peripherals
DMA, LCD, POR, WDT
Number Of I /o
69
Program Memory Type
ROMless
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
1.4 V ~ 1.6 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D17760BP200ADV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
(3) Read-Strobe Negate Timing
When the SRAM interface is in use, timing for the negation of the strobe during read operations
can be specified by the A1RDH and A4RDH bits in WCR3. When the byte control SRAM
interface is in use, AnRDH should be cleared to 0.
Rev. 2.00 Feb. 12, 2010 Page 316 of 1330
REJ09B0554-0200
Figure 10.12 SRAM Interface Wait State Timing (Read Strobe Negate Timing Setting;
CKIO
A25–A0
CSn
RD/WR
RD
D31–D0
BS
Note: * Where the AnRDH bit is set to 1.
TS1: Setup wait
AnS in WCR3
(0 to 1)
TS1
AnS = 1, AnW = 011, AnH = 10)
T1
Tw
Tw: Access wait
AnW in WCR2
Tw
(0 to 15)
Tw
T2
TH1, TH2: Hold wait
TH1
*
AnH in WCR3
(0 to 3)
TH2

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