HD64F3048BF25 Renesas Electronics America, HD64F3048BF25 Datasheet - Page 628

• Manufacturer Part Number: HD64F3048BF25
• Description: IC H8 MCU FLASH 128K 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048BF25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
Notes: 1. Normally do not apply a high level to the FWE pin. Apply a high level to the FWE pin
18.7
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes are made by
setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1 for addresses H'000000 to H'01FFFF.
The flash memory cannot be read while it is being written or erased. Install the program to control
flash memory programming and erasing (programming control program) in the on-chip RAM or in
external memory, and execute the program from there.
See section 18.11, Notes on Flash Memory Programming/Erasing, for points to be noted when
programming or erasing the flash memory. In the following operation descriptions, wait times
after setting or clearing individual bits in FLMCR1 are given as parameters; for details of the wait
times, see section 21.1.6, Flash Memory Characteristics.
Notes: 1. Operation is not guaranteed if bits SWE, ESU, PSU, EV, PV, E, and P of FLMCR1 are
Rev. 3.00 Sep 27, 2006 page 600 of 872
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2. When the flash memory is read normally in the user program mode, the programming/
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming should be performed in the erased state. Do not perform additional
Programming/Erasing Flash Memory
only when programming/erasing flash memory (including flash memory emulation by
RAM).
Also, while a high level is input to the FWE pin, the watchdog timer should be
activated to prevent overprogramming or overerasing due to program runaway, etc.
erasing program must not be executed. Bits 6 to 0 in FLMCR1 must be cleared to 0.
set/reset by a program in flash memory in the corresponding address areas.
executed if FWE = 0).
programming on previously programmed addresses.