HD64F3048BF25 Renesas Electronics America, HD64F3048BF25 Datasheet - Page 649
![IC H8 MCU FLASH 128K 100QFP](/photos/12/21/122166/qfp100-g1_pkg_sml.jpg)
HD64F3048BF25
Manufacturer Part Number
HD64F3048BF25
Description
IC H8 MCU FLASH 128K 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet
1.DF3048BF25V.pdf
(903 pages)
Specifications of HD64F3048BF25
Core Processor
H8/300H
Core Size
16-Bit
Speed
8MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3048BF25
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HD64F3048BF25V
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
- Current page: 649 of 903
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7. Do not use an interrupt during flash memory programming or erasing.
8. Do not perform additional programming. Reprogram flash memory after erasing.
9. Before programming, check that the chip is correctly mounted in the PROM
10. Do not touch the socket adapter or chip during programming.
11. A wait time of 100 µs or more is necessary when performing a read after a transition to
12. Use byte access on the registers that control the flash memory (FLMCR1, FLMCR2,
Similarly perform flash memory program execution and data read after clearing the SWE bit
even when using the RAM emulation function with a high level input to the FWE pin.
However, RAM area that overlaps flash memory space can be read/programmed whether the
SWE bit is set or cleared.
After the SWE bit is cleared, waiting time is required. For details, refer to table 21.11 in
section 21.1.6, Flash Memory Characteristics.
Since programming/erase operations (including emulation by RAM) have priority when a high
level is input to the FWE pin, disable all interrupt requests, including NMI. The bus release
should also be disabled.
With on-board programming, program to 128-byte programming unit blocks one time only.
Erase all the programming unit blocks before reprogramming.
programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
Touching either of these can cause contact faults and write errors.
normal mode from program, erase, or verify mode.
EBR, and RAMCR).
Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
Rev. 3.00 Sep 27, 2006 page 621 of 872
REJ09B0325-0300
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