HD64F3048BF25 Renesas Electronics America, HD64F3048BF25 Datasheet - Page 702

IC H8 MCU FLASH 128K 100QFP

HD64F3048BF25

Manufacturer Part Number
HD64F3048BF25
Description
IC H8 MCU FLASH 128K 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3048BF25

Core Processor
H8/300H
Core Size
16-Bit
Speed
8MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Section 21 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
Rev. 3.00 Sep 27, 2006 page 674 of 872
REJ09B0325-0300
2. Programming time per 128 bytes (Shows the total period for which the P bit in the flash
3. Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does
4. To specify the maximum programming time (t
5. For the maximum erase time (t
The wait time after P bit setting should be changed as follows according to the value of
Examples: When t
erase/erase-verify flowchart.
memory control register 1 (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
flowchart, set the maximum value (1000) for the maximum programming count (N).
the programming counter (n).
wait time after E bit setting (t
To set the maximum erase time, the values of t
the above formula.
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6: t
t
E
(max) = Wait time after E bit setting (t
When t
se
se
= 100 [ms], N = 12 times
= 10 [ms], N = 120 times
se
) and the maximum erase count (N):
E
(max)), the following relationship applies between the
se
P
)
(max)) in the 128-byte programming
se
and N should be set so as to satisfy
maximum erase count (N)
t
t
sp30
sp200
sp10
= 30 µs
= 10 µs
= 200 µs

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