hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 100

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Table 53
Parameter
OCD drive mode output delay
Data output hold time from DQS
Data hold skew factor
Average periodic refresh Interval
Auto-Refresh to Active/Auto-Refresh command
period
Read preamble
Read postamble
Active bank A to Active bank B command period
Internal Read to Precharge command delay
Write preamble
Write postamble
Write recovery time for write without Auto-
Precharge
Write recovery time for write with Auto-Precharge
Internal Write to Read command delay
Exit power down to any valid command
(other than NOP or Deselect)
Exit active power-down mode to Read command
(slow exit, lower power)
Exit precharge power-down to any valid command
(other than NOP or Deselect)
Exit Self-Refresh to non-Read command
Exit Self-Refresh to Read command
1) V
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be
3) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS,
5) Inputs are not recognized as valid until V
6) The output timing reference voltage level is V
7) For each of the terms, if not already an integer, round to the next highest integer. t
8) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode. In case of clock
9) For timing definition, Slew Rate and Slew Rate derating see Chapter 8.3
Data Sheet
powered down and then restarted through the specified initialization sequence before normal operation can continue.
differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. For other
Slew Rates see Chapter 8 of this data sheet. Timings are further guaranteed for normal OCD drive strength (EMRS(1) A1
= 0) under the Reference Load for Timing Measurements according to Chapter 8.1 only.
RDQS/ RDQS, input reference level is the crosspoint when in differential strobe mode;
The input reference level for signals other than CK/CK, DQS / DQS, RDQS / RDQS is defined in Chapter 8.3 of this data
sheet.
recognized as low.
WR refers to the WR parameter stored in the MR.
frequency change during power-down, a specific procedure is required as describes in Chapter 2.12.
DDQ
= 1.8 V ± 0.1 V; V
Timing Parameter by Speed Grade - DDR2-533 (cont’d)
DD
= 1.8 V ± 0.1 V. See notes
REF
stabilizes. During the period before V
TT
. See Chapter 8 for the reference load for timing measurements.
3)4)5)6)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WR
t
t
t
t
t
t
OIT
QH
QHS
REFI
RFC
RPRE
RPST
RRD
RTP
WPRE
WPST
WR
WTR
XARD
XARDS
XP
XSNR
XSRD
101
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
DDR2–533
Min.
0
t
—
—
—
105
0.9
0.40
7.5
10
7.5
0.35xt
0.40
15
t
7.5
2
6 – AL
2
t
200
HP
WR
RFC
– t
/t
CK
+10
QHS
CK
CK
REF
refers to the application clock period.
stabilizes, CKE = 0.2 x V
Max.
12
—
400
7.8
3.9
—
1.1
0.60
—
—
—
—
0.60
—
—
—
—
—
—
—
512-Mbit DDR2 SDRAM
Electrical Characteristics
09112003-SDM9-IQ3P
Rev. 1.6, 2005-08
Unit
ns
ps
µs
µs
ns
t
t
ns
ns
ns
t
t
ns
t
ns
t
t
t
ns
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
Note
3)4)5)6)
13)14)
13)15)
16)
12)
12)
1)17)18)
1)16)19)
20)
21)
22)
1)
DDQ
is
1)2)