hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 29

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Data Sheet
Table 8
Field
BA2
BA1
BA0
A13
PD
WR
DLL
TM
CL
Bits
16
15
14
13
12
[11:9] w
8
7
[6:4]
Mode Register Definition (BA[2:0] = 000B)
Type
reg. addr.
w
w
w
w
1)
Description
Bank Address [2]
Note: BA2 not available on 256 Mbit and 512 Mbit components
0
Bank Address [1]
0
Bank Address [0]
0
Address Bus[13]
Note: A13 is not available for 256 Mbit and x16 512 Mbit configuration
0
Active Power-Down Mode Select
0
1
Write Recovery
Note: All other bit combinations are illegal.
001
010
011
100
101
DLL Reset
0
1
Test Mode
0
1
CAS Latency
Note: All other bit combinations are illegal.
010
011
100
101
110
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
BA2, Bank Address
BA1, Bank Address
BA0, Bank Address
A13, Address bit 13
PD, Fast exit
PD, Slow exit
WR, 2
WR, 3
WR, 4
WR, 5
WR, 6
DLL, No
DLL, Yes
TM, Normal Mode
TM, Vendor specific test mode
CL, 2
CL, 3
CL, 4
CL, 5
CL, 6
2)
30
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
Functional Description
09112003-SDM9-IQ3P
Rev. 1.6, 2005-08