hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 23

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

2.3
Figure 4
Notes
1. 128Mb
2. This Functional Block Diagram is intended to
Data Sheet
11 Column External Adresses
facilitate user understanding of the operation of the
×
Block Diagrams
Block Diagram 32 Mbit × 4 I/O ×4 Internal Memory Banks
4 Organisation with 14 Row, 2 Bank and
24
3. DM is a unidirectional signal (input only), but is
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
device; it does not represent an actual circuit
implementation.
internally loaded to match the load of the
bidirectional DQ and DQS signals.
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.6, 2005-08