hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 14

hyb18t512160afl-3.7

Manufacturer Part Number

hyb18t512160afl-3.7

Description

512-mbit Ddr2 Sdram

Manufacturer

Infineon Technologies Corporation

Datasheet

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Table 4

Ball#/Pin#

Control Signals ×16 organization

Address Signals ×4/×8 organizations

Address Signals ×16 organization

Data Sheet

Pin Configuration of DDR2 SDRAM

Name

RAS

CAS

BA0

BA1

A10

A11

A12

A13

BA0

BA1

Type

–

Buffer

Type

SSTL

–

SSTL

–

Function

Chip Select

Note: All command are masked when CS is registered HIGH. CS

Row Address Strobe (RAS), Column Address Strobe (CAS),

Write Enable (WE)

Chip Select

Bank Address Bus 1:0

Note: BA[1:0] define to which bank an Activate, Read, Write or

Address Signal 12:0, Address Signal 10/Autoprecharge

Note: Address Signal 10/Autoprecharge provides the row address

Address Signal 13

Note: x4/x8 512 Mbit components

Note: 256 Mbit components and x16 512 Mbit components

Bank Address Bus 1:0

provides for external rank selection on systems with

multiple memory ranks. CS is considered part of the

command.

Precharge command is being applied. BA[1:0] also

determines which (extended) mode register is to be

accessed during a (E)MRS cycle

for Activate commands and the column address and Auto-

Precharge bit A10 (=AP) for Read/Write commands to

select one location out of the memory array in the respective

bank. A10 (=AP) is sampled during a Precharge command

to determine whether the Precharge applies to one bank

(A10=LOW) or all banks (A10=HIGH). If only one bank is to

be precharged, the bank is selected by BA[1:0]. The

address inputs also provide the register value during Mode

HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]

Pin Configuration and Block Diagrams

512-Mbit DDR2 SDRAM

09112003-SDM9-IQ3P

Rev. 1.6, 2005-08

hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 14

hyb18t512160afl-3.7

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