hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 92

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Table 46
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
1) For LowPower Components
2) MRS(12)=0
3) MRS(12)=1
4) 0 ≤ T
Data Sheet
DD0
DD1
DD2N
DD2P
DD2P(L)
DD2Q
DD3N
DD3P(MRS= 0)
DD3P(MRS= 1)
DD4R
DD4W
DD5B
DD5D
DD6
DD6(L)
DD7
CASE
≤ 85°C
IDD Specification for HYB18T512xxxAF(L)
–3
DDR2–667
Max.
75
95
90
110
50
5.5
—
40
50
19
6
130
150
140
170
140
6
5.5
—
155
240
–3S
DDR2–667
Max.
71
90
85
104
50
5.5
—
40
50
19
6
130
150
140
170
140
6
5.5
—
147
228
Currents Measurement Specifications and Conditions
–3.7
DDR2–533
Max.
65
80
75
90
40
5.5
2
30
40
16
5.5
90
115
95
130
130
6
5.5
2
145
220
93
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
–5
DDR2–400
Max.
55
70
60
75
32
5.5
—
25
35
13
5.5
70
85
80
110
120
6
5.5
—
140
210
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Rev. 1.6, 2005-08
Notes
×4/×8
×16
×4/×8
×16
1)
2)
3)
×4/×8
×16
×4/×8
×16
4)
4)
1)4)
×4/×8
×16