hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 84

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Table 36
Voltage (V)
0.2
0.3
0.4
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (
3) The driver characteristics evaluation conditions are Nominal 25 °C (
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (
Table 37
Voltage (V)
0.2
0.3
0.4
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (
3) The driver characteristics evaluation conditions are Nominal 25 °C (
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (
Data Sheet
process
process
Full Strength Calibrated Pull-down Driver Characteristics
Full Strength Calibrated Pull-up Driver Characteristics
Calibrated Pull-up Driver Current [mA]
Nominal
Minimum
(21 Ohms)
–9.5
–14.3
–18.3
Calibrated Pull-down Driver Current [mA]
Nominal Minimum
(21 Ohms)
9.5
14.3
18.7
1)
Nominal Low
(18.75 Ohms)
–10.7
–16.0
–21.0
1)
Nominal Low
(18.75 Ohms)
10.7
16.0
21.0
2)
2)
85
Nominal
(18 ohms)
–11.4
–16.5
–21.2
Nominal
(18 ohms)
11.5
16.6
21.6
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
T
T
CASE
CASE
3)
3)
),
),
V
V
DDQ
DDQ
T
T
T
T
CASE
CASE
CASE
CASE
Nominal High
(17.25 Ohms)
–11.8
–17.4
–23.0
= 1.8 V, typical process
= 1.8 V, typical process
Nominal High
(17.25 Ohms)
11.8
17.4
23.0
),
),
).
).
AC & DC Operating Conditions
V
V
V
V
DDQ
DDQ
DDQ
DDQ
512-Mbit DDR2 SDRAM
= 1.9 V, any process
= 1.9 V, any process
= 1.7 V, any process
= 1.7 V, any process
T
T
CASE
CASE
09112003-SDM9-IQ3P
),
2)
),
2)
V
V
DDQ
DDQ
Rev. 1.6, 2005-08
Nominal
Maximum
(15 Ohms)
–13.3
–20.0
–27.0
Nominal
Maximum
(15 Ohms)
13.3
20.0
27.0
= 1.8V, any
= 1.8V, any
4)
4)