s71ws256nc0bawa30 Meet Spansion Inc., s71ws256nc0bawa30 Datasheet - Page 119

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s71ws256nc0bawa30

Manufacturer Part Number
s71ws256nc0bawa30
Description
Stacked Multi-chip Product Mcp 256/512/128 Megabit 32m/16m/8m X 16 Bit Cmos 1.8 Volt-only Simultaneous Read/write, Burst-mode Flash Memory With 128/64megabit 8m/4m X 16-bit Psram.
Manufacturer
Meet Spansion Inc.
Datasheet
30 DC and Operating Characteristics
30.1
31 AC Operating Conditions
31.1
September 15, 2005 S71WS-N_01_A4
Common
Test Conditions (Test Load and Test Input/Output Reference)
Notes:
1. Full Array Partial Refresh Current (I
2. Standby mode is supposed to be set up after at least one active operation after
Input Leakage Current
Output Leakage Current
Average Operating
Current
Average Operating
Current (Sync)
Output Low Voltage
Output High Voltage
Standby Current (CMOS)
Partial Refresh Current
power up. ISB1 is measured 60 ms from the time when standby mode is set up.
Input pulse level: 0.2 to V
Input rising and falling time: 3ns
Input and output reference voltage: 0.5 x V
Output load (See
Item
A d v a n c e
Figure
Dout
I
SBP
(Note
Symbol
I
I
I
V
V
(Note
I
I
CC2
CC3
SB1
Figure 31.1 PAR Mode Execution and Exit
LO
OH
LI
OL
I n f o r m a t i o n
31.1): CL=30pF
2)
S71WS-Nx0 Based MCPs
CC
1)
-0.2V
V
CS#=V
WE#=V
Cycle time=t
CS#=V
Burst Length 4, Latency 5, 66MHz, IIO=0mA, Address
transition 1 time, CS#=V
I
I
CS# ≥ V
Other inputs = V
MRS# ≤ 0.2V, CS# ≥ V
Other inputs = V
OL
OH
IN
Z0= 50
=0.1mA
=V
=-0.1mA
SBP
SS
IH
IL
IL
) is the same as Standby Current (I
CC
, MRS#=V
to V
, MRS#=V
, V
-0.2V, MRS# ≥ V
IO
RC
CC
=V
+3t
SS
SS
SS
Vtt = 0.5 x V DDQ
CC
50
30pF
PC
IH
IH
to V
to V
to V
, I
Test Conditions
, V
, OE#=V
CC
IO
CC
CC
CC
IN
-0.2V
=0mA, 100% duty,
IL
=V
CC
, MRS#=V
IL
-0.2V,
IH
or V
or
IH
IH
< 40°C
< 85°C
, V
IN
< 40°C
< 85°C
=V
IL
3/4 Block
1/2 Block
1/4 Block
3/4 Block
1/2 Block
1/4 Block
or V
SB1
IH
).
Min Typ Max Unit
1.4
-1
-1
120
180
120
115
115
180
165
165
0.2
40
40
1
1
mA
mA
µA
µA
µA
µA
µA
µA
V
V
117

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