s71ws256nc0bawa30 Meet Spansion Inc., s71ws256nc0bawa30 Datasheet - Page 147

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s71ws256nc0bawa30

Manufacturer Part Number
s71ws256nc0bawa30
Description
Stacked Multi-chip Product Mcp 256/512/128 Megabit 32m/16m/8m X 16 Bit Cmos 1.8 Volt-only Simultaneous Read/write, Burst-mode Flash Memory With 128/64megabit 8m/4m X 16-bit Psram.
Manufacturer
Meet Spansion Inc.
Datasheet
1.8V pSRAM Type 4
8M x 16-bit Synchronous Burst pSRAM
Features
Publication Number S71WS-N_01
Process Technology: CMOS
Organization: 8M x16 bit Power Supply Voltage: 1.7–2.0V
Three State Outputs
Supports MRS (Mode Register Set)
MRS control - MRS Pin Control
Supports Power Saving modes - Partial Array Refresh mode Internal TCSR
Supports Driver Strength Optimization for system environment power saving
Supports Asynchronous 4-Page Read and Asynchronous Write Operation
Supports Synchronous Burst Read and Asynchronous Write Operation (Address Latch Type
and Low ADV Type)
Supports Synchronous Burst Read and Synchronous Burst Write Operation
Synchronous Burst (Read/Write) Operation
— Supports 4 word / 8 word / 16 word and Full Page(256 word) burst
— Supports Linear Burst type & Interleave Burst type
— Latency support:
— Supports Burst Read Suspend in No Clock toggling
— Supports Burst Write Data Masking by /UB & /LB pin control
— Supports WAIT pin function for indicating data availability.
Max. Burst Clock Frequency: 66MHz
Latency 5 @ 66MHz(tCD 10ns)
Latency 4 @ 54MHz(tCD 10ns)
Revision A
Amendment 4
Issue Date September 15, 2005
INFORMATION
ADVANCE

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