s71ws256nc0bawa30 Meet Spansion Inc., s71ws256nc0bawa30 Datasheet - Page 91

• Manufacturer Part Number: s71ws256nc0bawa30
• Description: Stacked Multi-chip Product Mcp 256/512/128 Megabit 32m/16m/8m X 16 Bit Cmos 1.8 Volt-only Simultaneous Read/write, Burst-mode Flash Memory With 128/64megabit 8m/4m X 16-bit Psram.
• Manufacturer: Meet Spansion Inc.

September 15, 2005 S71WS-N_01_A4
14.8.7
Erase and Programming Performance
Notes:
1.
2. Under worst case conditions of 90°C, V
3. Typical chip programming time is considerably less than the maximum chip programming time listed, and is
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
6. Contact the local sales office for minimum cycling endurance values in specific applications and operating
7. Refer to Application Note “Erase Suspend/Resume Timing” for more details.
8. Word programming specification is based upon a single word programming operation not utilizing the write
9. The content in this document is Advance information for the S29WS128N. Content in this document is
Parameter
Sector Erase Time
Chip Erase Time
Single Word Programming Time
(Note
Effective Word Programming Time
utilizing Program Write Buffer
Total 32-Word Buffer Programming
Time
Chip Programming Time
based on utilizing the Write Buffer.
erasure.
command. See the
conditions.
buffer.
Preliminary for the S29W256N.
Typical program and erase times assume the following conditions: 25°C, 1.8 V V
cycles; checkerboard data pattern.
8)
A d v a n c e
Appendix
(Note
64 Kword
16 Kword
3)
I n f o r m a t i o n
for further information on command definitions.
S71WS-Nx0 Based MCPs
ACC
ACC
ACC
ACC
ACC
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
= 1.70 V, 100,000 cycles.
153.6 (WS256N)
130.6 (WS256N)
157.3 (WS256N)
100.7 (WS256N)
77.4 (WS128N)
65.8 (WS128N)
78.6 (WS128N)
50.3 (WS128N)
Typ
<0.15
(Note
300
192
0.6
9.4
40
24
6
1)
314.6 (WS256N)
157.3 (WS128N)
201.3 (WS256N)
100.7 (WS128N)
308 (WS256N)
154 (WS128N)
262 (WS256N)
132 (WS128N)
Max
3000
1920
400
240
(Note
3.5
94
60
2
2)
CC
, 10,000
Unit
µs
µs
µs
s
s
s
Excludes 00h
programming prior
to erasure
Excludes system
level overhead
(Note
Comments
5)
(Note
4)
89