h8s-2649 Renesas Electronics Corporation., h8s-2649 Datasheet - Page 737

• Manufacturer Part Number: h8s-2649
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
• Manufacturer: Renesas Electronics Corporation.

Notes: 1. Make each time setting in accordance with the program or erase algorithm.
Item
Erase
2. Programming time per 128 bytes (shows the total period for which the P bit in the flash
3. Block erase time (shows the total period for which the E bit in FLMCR1 is set and does
4. To specify the maximum programming time value (tp (max.)) in the 128-byte
5. For the maximum erase time (t
Examples: When t
memory control register (FLMCR1) is set and does not include the programming
verification time.)
not include the erase verification time.)
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
[In additional programming]
Programming counter (n)= 1 to 6:
wait time after E bit setting (t
To specify the maximum erase time, the values of (t
satisfy the above formula.
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H'FF dummy
write*
Wait time after EV bit clear*
Wait time after SWE bit clear*
Maximum erase count*
t
E
1
(max.) = Wait time after E bit setting (t
When t
se
se
= 100 [ms], N = 12 times
= 10 [ms], N = 120 times
1,
*
5
1
se
1
1
1
) and the maximum erase count (N):
E
(max.)), the following relationship applies between the
Symbol
t
t
t
t
t
N
cesu
sev
sevr
cev
cswe
t
t
t
Section 23 Electrical Characteristics [Preliminary]
sp30
sp200
sp10
Min.
10
20
2
4
100
12
= 30 µs
= 10 µs
se
= 200 µs
) x maximum erase count (N)
Rev. 2.00 Dec. 05, 2005 Page 699 of 724
Typ.
10
20
2
4
100
—
se
) and (N) should be set so as to
Max.
—
—
—
—
—
120
Unit
µs
µs
µs
µs
µs
Times
REJ09B0200-0200
Test
Conditions