MT41J128M8 MDTIC [Micon Design Technology Corporation], MT41J128M8 Datasheet - Page 52

• Manufacturer Part Number: MT41J128M8
• Description: 1Gb: x4, x8, x16 DDR3 SDRAM
• Manufacturer: MDTIC [Micon Design Technology Corporation]

Table 34:
Figure 26:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. D 8/1/08 EN
Measured Parameter
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
t
t
AONPD
AOFPD
t
t
t
AON
ADC
AOF
t AON
Reference Settings for ODT Timing Measurements
t
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL on
AON and
Notes:
t
V
AOF Definitions
SS
1. Assume an RZQ of 240Ω (±1 percent) and that proper ZQ calibration has been performed at
Q
a stable temperature and voltage (V
R
TT
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
_
NOM
t AON
T
SW
Setting
1
End point: Extrapolated point at V
T
SW
2
V
CK
CK#
SW
1
t AOF
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL off
V
SW
R
2
52
RZQ/2 (120Ω)
TT
_
WR
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
V
DD
Setting
SW
2
SS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = V
Q
DD
V
SW
, V
1
1Gb: x4, x8, x16 DDR3 SDRAM
t AOF
SS
End point: Extrapolated point at V
Q = V
T
SW
1
T
SW
100mV
100mV
100mV
100mV
200mV
SS
50mV
50mV
50mV
50mV
V
1
).
SW
1
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
V
RTT
_
NOM
V
DD
V
SS
Q/2
Q
100mV
200mV
100mV
200mV
100mV
200mV
100mV
200mV
300mV
RTT
V
SW
_
NOM
2