SE97 NXP [NXP Semiconductors], SE97 Datasheet - Page 39

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SE97

Manufacturer Part Number
SE97
Description
DDR memory module temp sensor with integrated SPD, 3.3 V
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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0
NXP Semiconductors
SE97_5
Product data sheet
Fig 25. Average supply current
Fig 27. Average supply current during EEPROM write
Fig 29. EVENT output current SE97PW, SE97TK
I
I
DD(AV)
DD(AV)
(mA)
( A)
( A)
I
OL
500
400
300
200
100
600
500
400
300
200
8.0
6.0
4.0
2.0
0
0
40
40
50
I
Temp sensor and EEPROM active.
V
2
OL1
C-bus and EEPROM inactive.
= 0.4 V.
25
0
0
0
V
V
25
DD
DD
40
40
V
V
= 3.0 V to 3.6 V
= 1.7 V
DD
DD
50
= 3.6 V
= 3.6 V
3.0 V
3.0 V
75
80
80
T
T
T
amb
amb
amb
002aad258
002aac910
002aac912
100
( C)
( C)
( C)
120
120
125
Rev. 05 — 6 August 2009
DDR memory module temp sensor with integrated SPD, 3.3 V
Fig 26. Shutdown supply current
Fig 28. Typical temperature accuracy
Fig 30. EVENT output current SE97TL, SE97TP
I
OL(sink)EVENT
T
I
sd(VDD)
lim(acc)
( C)
( A)
(mA)
3.5
2.0
1.0
1.0
2.0
3.5
30
20
10
5
3
1
1
0
40
I
50
V
50
V
2
C-bus, temp sensor and EEPROM inactive.
DD
OL1
= 3.0 V to 3.6 V.
= 0.4 V.
25
25
V
DD
0
= 3.7 V
0
0
3.3 V
2.9 V
1.7 V
25
25
40
50
50
V
75
75
DD
80
© NXP B.V. 2009. All rights reserved.
= 3.6 V
T
T
T
amb
amb
amb
002aac911
002aad769
002aad767
3.0 V
100
100
( C)
( C)
( C)
120
125
125
SE97
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