DEMO9S08EL32 Freescale Semiconductor, DEMO9S08EL32 Datasheet - Page 331

BOARD DEMO FOR 9S08 EL MCU

DEMO9S08EL32

Manufacturer Part Number
DEMO9S08EL32
Description
BOARD DEMO FOR 9S08 EL MCU
Manufacturer
Freescale Semiconductor
Type
MCUr
Datasheets

Specifications of DEMO9S08EL32

Contents
Evaluation Board
Processor To Be Evaluated
MC9S08EL32
Data Bus Width
8 bit
Interface Type
RS-232, USB
Operating Supply Voltage
12 V
Silicon Manufacturer
Freescale
Core Architecture
HCS08
Core Sub-architecture
HCS08
Silicon Core Number
MC9S08
Silicon Family Name
S08EL
Rohs Compliant
Yes
For Use With/related Products
MC9S08EL32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
The average chip-junction temperature (T
where:
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
P
solving
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Freescale Semiconductor
D
(at equilibrium) for a known T
I/O
T
θ
P
P
P
JA
D
int
I/O
A
1
2
is neglected) is:
Equation A-1
= Ambient temperature, °C
= P
Equation A-1
= Package thermal resistance, junction-to-ambient, °C/W
= I
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance,
mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on
the board, and board thermal resistance.
Junction to Ambient Natural Convection
= Power dissipation on input and output pins — user determined
ESD Protection and Latch-Up Immunity
int
DD
+ P
× V
I/O
DD
, Watts — chip internal power
and
and
I/O
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
Equation A-2
Equation A-2
<< P
K = P
int
A
and can be neglected. An approximate relationship between P
. Using this value of K, the values of P
D
P
T
× (T
D
J
iteratively for any value of T
for K gives:
= K ÷ (T
= T
J
A
) in °C can be obtained from:
+ 273°C) + θ
A
+ (P
J
D
+ 273°C)
× θ
JA
JA
)
× (P
D
)
2
A
.
D
Appendix A Electrical Characteristics
and T
J
can be obtained by
D
Eqn. A-1
Eqn. A-2
Eqn. A-3
and T
333
J

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