MC56F8345VFGE Freescale Semiconductor, MC56F8345VFGE Datasheet - Page 156

IC DSP 16BIT 60MHZ 128-LQFP

MC56F8345VFGE

Manufacturer Part Number
MC56F8345VFGE
Description
IC DSP 16BIT 60MHZ 128-LQFP
Manufacturer
Freescale Semiconductor
Series
56F8xxxr
Datasheet

Specifications of MC56F8345VFGE

Core Processor
56800
Core Size
16-Bit
Speed
60MHz
Connectivity
CAN, EBI/EMI, SCI, SPI
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
49
Program Memory Size
136KB (68K x 16)
Program Memory Type
FLASH
Ram Size
6K x 16
Voltage - Supply (vcc/vdd)
2.25 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 105°C
Package / Case
128-LQFP
Data Bus Width
16 bit
Processor Series
MC56F83xx
Core
56800E
Numeric And Arithmetic Format
Fixed-Point
Device Million Instructions Per Second
60 MIPs
Maximum Clock Frequency
60 MHz
Number Of Programmable I/os
49
Data Ram Size
8 KB
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Interface Type
SCI, SPI, CAN
Minimum Operating Temperature
- 40 C
For Use With
MC56F8367EVME - EVAL BOARD FOR MC56F83X
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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10.17 Power Consumption
This section provides additional detail which can be used to optimize power consumption for a given
application.
Power consumption is given by the following equation:
A, the internal [static component], is comprised of the DC bias currents for the oscillator, leakage current,
PLL, and voltage references. These sources operate independently of processor state or operating
frequency.
B, the internal [state-dependent component], reflects the supply current required by certain on-chip
resources only when those resources are in use. These include RAM, Flash memory and the ADCs.
C, the internal [dynamic component], is classic C*V
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V
of the IO cell types used on the device reveal that the power-versus-load curve does have a non-zero
Y-intercept.
156
Total power =
1.
2.
3.
4.
Parasitic capacitance due to package, pin-to-pin and pin-to-package base coupling; 1.8pf
Parasitic capacitance due to the chip bond pad, ESD protection devices and signal routing; 2.04pf
Equivalent resistance for the ESD isolation resistor and the channel select mux; 500 ohms
Sampling capacitor at the sample and hold circuit. Capacitor C1 is normally disconnected from the input and is only
connected to it at sampling time; 1pf
Analog Input
+D: external [dynamic component]
+B: internal [state-dependent component]
+C: internal [dynamic component]
+E: external [static]
A: internal [static component]
1
Figure 10-22 Equivalent Circuit for A/D Loading
2
56F8345 Technical Data, Rev. 17
(V
REFH
3
- V
REFLO
2
*F CMOS power dissipation corresponding to the
) / 2
S1
S2
4
S3
C1
C2
S/H
2
*F, although simulations on two
C1 = C2 = 1pF
Freescale Semiconductor
Preliminary

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