MC9S12NE64VTUE Freescale Semiconductor, MC9S12NE64VTUE Datasheet - Page 514

• Manufacturer Part Number: MC9S12NE64VTUE
• Description: IC MCU 64K FLASH EEPROM 80-TQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12NE64VTUE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: EBI/EMI, Ethernet, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.375 V ~ 3.465 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 80-TQFP Exposed Pad, 80-eTQFP, 80-HTQFP, 80-VQFP
• Processor Series: S12N
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 125 MHz
• Number Of Programmable I/os: 70
• Number Of Timers: 4
• Operating Supply Voltage: - 0.3 V to + 3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: EVB9S12NE64E, DEMO9S12NE64E
• Minimum Operating Temperature: - 65 C
• On-chip Adc: 10 bit, 8 Channel
• Cpu Family: HCS12
• Device Core Size: 16b
• Frequency (max): 25MHz
• Total Internal Ram Size: 8KB
• # I/os (max): 70
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 2.625/3.465V
• Operating Supply Voltage (min): 2.357/2.375/3.135V
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 105C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 80
• Package Type: TQFP
• For Use With: EVB9S12NE64E - BOARD EVAL FOR 9S12NE64DEMO9S12NE64E - DEMO BOARD FOR 9S12NE64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Appendix A Electrical Characteristics
For the following definitions see also Figure A-1.
Differential non-linearity (DNL) is defined as the difference between two adjacent switching steps.
The integral non-linearity (INL) is defined as the sum of all DNLs:
514
1
Conditions are shown in
V
f
Num C
ATDCLK
REF
These values include the quantization error which is inherently 1/2 count for any A/D converter.
1
2
3
4
5
6
7
8
9
= V
C 10-Bit Absolute Error at f
P 10-Bit Resolution
P 10-Bit Differential Nonlinearity
P 10-Bit Integral Nonlinearity
P 10-Bit Absolute Error
P 8-Bit Resolution
P 8-Bit Differential Nonlinearity
P 8-Bit Integral Nonlinearity
P 8-Bit Absolute Error
= 2.0 MHz
RH
- V
RL
= 3.328 V. Resulting to one 8 bit count = 13 mV and one 10 bit count = 3.25 mV
Table A-4
Rating
INL n ( )
1
Table A-10. 3.3-V A/D Conversion Performance
1
unless otherwise noted
ATDCLK
DNL i ( )
MC9S12NE64 Data Sheet, Rev. 1.1
=
= 4MHz
i
∑
=
n
1
DNL i ( )
=
Symbol
V
------------------------ - 1
LSB
DNL
LSB
DNL
INL
INL
AE
AE
AE
i
1LSB
–
V
=
i 1
–
V
------------------- - n
1LSB
Min
–1.5
–3.5
–0.5
–1.5
–2.0
n
–5
–
–
V
0
–
Typ
3.25
±1.5
±2.5
±7.0
±1.0
±1.5
13
Freescale Semiconductor
Max
1.5
3.5
0.5
1.5
2.0
5
Counts
Counts
Counts
Counts
Counts
Counts
Counts
Unit
mV
mV