MC56F8147VPYE Freescale Semiconductor, MC56F8147VPYE Datasheet - Page 136

• Manufacturer Part Number: MC56F8147VPYE
• Description: IC DSP 16BIT 40MHZ 160-LQFP
• Manufacturer: Freescale Semiconductor
• Series: 56F8xxxr

Specifications of MC56F8147VPYE

• Core Processor: 56800
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 128KB (64K x 16)
• Program Memory Type: FLASH
• Ram Size: 4K x 16
• Voltage - Supply (vcc/vdd): 2.25 V ~ 3.6 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 160-LQFP
• Data Bus Width: 16 bit
• Processor Series: MC56F81xx
• Core: 56800E
• Data Ram Size: 4 KB
• Interface Type: SPI, SCI, CAN
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 76
• Number Of Timers: 2
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4 x 12 bit, 4 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10.3 AC Electrical Characteristics
Tests are conducted using the input levels specified in
propagation delays are measured from the 50% to the 50% point, and rise and fall times are measured
between the 10% and 90% points, as shown in
Figure 10-2
10.4 Flash Memory Characteristics
136
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•
•
•
1. There is additional overhead which is part of the programming sequence. See the 56F8300 Peripheral User Manual
2. Specifies page erase time. There are 512 bytes per page in the Data and Boot Flash memories. The Program Flash
Characteristic
Program time
Erase time
Mass erase time
for details. Program time is per 16-bit word in Flash memory. Two words at a time can be programmed within the Pro-
gram Flash module, as it contains two interleaved memories.
module uses two interleaved Flash memories, increasing the effective page size to 1024 bytes.
Input Signal
Note: The midpoint is V
Active state, when a bus or signal is driven, and enters a low impedance state
Tri-stated, when a bus or signal is placed in a high impedance state
Data Valid state, when a signal level has reached V
Data Invalid state, when a signal level is in transition between V
Data Invalid State
shows the definitions of the following signal states:
2
1
Data1 Valid
Data1
Figure 10-1 Input Signal Measurement References
Fall Time
IL
+ (V
Data Active
Midpoint1
Table 10-12 Flash Timing Parameters
IH
V
– V
IH
IL
Figure 10-2 Signal States
)/2.
56F8347 Technical Data, Rev.11
Data2 Valid
Symbol
T
T
Data2
T
erase
prog
me
Figure
Low
V
IL
OL
10-1.
Min
100
20
20
or V
Tri-stated
OH
Data
Table
OL
Typ
Rise Time
10-5. Unless otherwise specified,
—
—
—
and V
High
OH
Data3 Valid
Data Active
Data3
Max
—
—
—
Freescale Semiconductor
90%
50%
10%
Unit
ms
ms
μs
Preliminary