DF2372RVFQ34V Renesas Electronics America, DF2372RVFQ34V Datasheet - Page 302

• Manufacturer Part Number: DF2372RVFQ34V
• Description: IC H8S/2372 MCU FLASH 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2372RVFQ34V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.7.13
This LSI is provided with a synchronous DRAM refresh control function. Auto refreshing is used.
In addition, self-refreshing can be executed when the chip enters the software standby state.
Refresh control is enabled when any area is designated as continuous synchronous DRAM space
in accordance with the setting of bits RMTS2 to RMTS0 in DRAMCR.
Auto Refreshing: To select auto refreshing, set the RFSHE bit to 1 in REFCR.
With auto refreshing, RTCNT counts up using the input clock selected by bits RTCK2 to RTCK0
in REFCR, and when the count matches the value set in RTCOR (compare match), refresh control
is performed. At the same time, RTCNT is reset and starts counting up again from H'00.
Refreshing is thus repeated at fixed intervals determined by RTCOR and bits RTCK2 to RTCK0.
Rev.7.00 Mar. 18, 2009 page 234 of 1136
REJ09B0109-0700
Precharge-sel
DQMU, DQML
Address bus
Refresh Control
Data bus
CKE
CAS
RAS
WE
Figure 6.53 Example of Operation Timing in RAS Down Mode
φ
PALL ACTV READ
Continuous synchronous
DRAM space read
address
Column
T
p
address
address
Row
Row
T
r
(BE = 1, CAS Latency 2)
T
c1
Column address
T
cl
T
c2
High
NOP
External
space read
External address
External address
T
1
T
2
READ
Continuous synchronous
DRAM space read
T
c1
Column address 2
T
cl
NOP
T
c2