DF2372RVFQ34V Renesas Electronics America, DF2372RVFQ34V Datasheet - Page 979

IC H8S/2372 MCU FLASH 144LQFP

DF2372RVFQ34V

Manufacturer Part Number
DF2372RVFQ34V
Description
IC H8S/2372 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2372RVFQ34V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2372RVFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
8. When the data storable area indicated by programming parameter FMPDR is within the flash
In consideration of these conditions, there are three factors; operating mode, the bank structure of
the user MAT, and operations.
The areas in which the programming data can be stored for execution are shown in tables.
Table 21.7 Executable MAT
Operation
Programming
Erasing
Note : * Programming/Erasing is possible to user MATs.
Boot MAT. Please make sure you know which MAT is selected when switching between
them.
memory area, an error will occur even when the data stored is normal. Therefore, the data
should be transferred to the on-chip RAM to place the address that FMPDR indicates in an
area other than the flash memory.
Table 21.8 (2)
User Program Mode
Table 21.8 (1)
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 911 of 1136
Initiated Mode
User Boot Mode *
Table 21.8 (3)
Table 21.8 (4)
REJ09B0109-0700

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