DF2372RVFQ34V Renesas Electronics America, DF2372RVFQ34V Datasheet - Page 346

IC H8S/2372 MCU FLASH 144LQFP

DF2372RVFQ34V

Manufacturer Part Number
DF2372RVFQ34V
Description
IC H8S/2372 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2372RVFQ34V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2372RVFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.14.4
When the BREQOE bit is set to 1 and the BREQO signal is output, BREQO may go low before
the BACK signal.
This will occur if the next external access request or CBR refresh request occurs while internal bus
arbitration is in progress after the chip samples a low level of BREQ.
6.14.5
Setting of Synchronous DRAM Interface: The DCTL pin must be fixed to 1 to enable the
synchronous DRAM interface. Do not change the DCTL pin during operation.
Connection Clock: Be sure to set the clock to be connected to the synchronous DRAM to
SDRAMφ.
WAIT Pin: In the continuous synchronous DRAM space, insertion of the wait state by the WAIT
pin is disabled regardless of the setting of the WAITE bit in BCR.
Bank Control: This LSI cannot carry out the bank control of the synchronous DRAM. All banks
are selected.
Burst Access: The burst read/burst write mode of the synchronous DRAM is not supported.
When setting the mode register of the synchronous DRAM, set to the burst read/single write and
set the burst length to 1.
CAS Latency: When connecting a synchronous DRAM having CAS latency of 1, set the BE bit
to 0 in the DRAMCR.
Note: The synchronous DRAM interface is not supported by the H8S/2378 Group.
Rev.7.00 Mar. 18, 2009 page 278 of 1136
REJ09B0109-0700
BREQO Output Timing
Notes on Usage of the Synchronous DRAM

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