BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 15

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

^ = SOD523, SOD323, SOT23 & SOT323
* = check status at 3.1 new products, as this type has not been released yet for mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Function
Function
Function
Function
Function
Function
Product highlight:
The BLS6G2933P-200 is the first LDMOS based, industry standard
pallet available on the market. This pallet offers more than 40%
efficiency includes the complete bias network and can be used
as direct replacement for current solutions.
Discrete attenuator
amplifier) & Mixer
(medium power
LNA (low noise
LO generator
(variable gain
IF amplifier
amplifier)
amplifier)
PLL/VCO
VGA
MPA
Product
Product
Product
Product
Product
Product
RF transistor
RF diode
MMIC
MMIC
MMIC
RF IC
SiGe:C transistor
General purpose
SiGe:C MMIC
SiGe:C MMIC
SiGe:C MMIC
PIN diode
wideband
amplifiers
SiGe:C IC
MMIC
Package
Various^
Package
SOT343F
Package
SOT363
Package
SOT616
Package
SOT617
Package
SOT908
SOT89
SOT908
SOT89
SOT908
SOT908
SOT89
Features
`
`
`
`
`
P1 dB> 200 W
Efficiency > 40%
Industry standard footprint
50 Ω in/out matched for entire bandwidth
Lightweight heat sink included
Type
BAP64
Type
BFU725F/N1
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
Type
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
BGA6589
Type
Type
NXP Semiconductors RF Manual 14
th
edition
17