BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 54

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

2.10
NXP GaN technology for RF power
This new gallium-nitride (GaN) technology, the result of a collaborative development effort,
enables high-power amplifiers that deliver very high efficiency in next-generation wireless
communication systems.
Features
` Power density that is up to five times higher than Si LDMOS
` 50 V operation
` High gain
` High efficiency
` High reliability
` Low parasitics
Benefits
` High frequency combined with high power
` Broadband operation that lets a single power amplifier
` Enabling technology for next-generation, high-power, Switch
` Lowers system costs and operational expenditures
` Ideal for tower-top base stations
Applications
` Cellular base stations
` WiMAX
` Broadcast
` Radar
Collaborating with United Monolithic Semiconductors and
the Fraunhofer Institute for Applied Solid State Physics, NXP
Semiconductors is developing a gallium-nitride (GaN) process
technology that boosts performance of next-generation RF
power amplifiers.
The new GaN process, with its high frequency combined
with high power, puts NXP in the ideal position of being able
to support future applications while continuing to evolve its
well-established LDMOS technology.
The GaN technology delivers numerous benefits to
manufacturers of infrastructure equipment. Using the GaN
technology in a transmitter represents a significant cost savings
in system manufacturing, along with major improvements in
system performance and flexibility.
56
function at multiple frequencies
Mode Power Amplifier (SMPA) architectures
NXP Semiconductors RF Manual 14
Boost efficiency and lower system cost in wireless infrastructure with GaN
th
edition
Most of today’s base station power amplifiers are limited to
specific applications. The new GaN-based technology lets
operators use a “universal transmitter” to switch between
systems and frequencies, so they can instantly meet demands
in the base station’s coverage area. GaN transistors enable
much more efficient power amplifiers and as a result drive
down the operational costs of telecom operators.
GaN transistors can operate at much higher junction
temperatures than Si- and GaAs-based devices, so GaN is
an ideal candidate for environments with reduced cooling
capabilities, such as tower-top base stations. Also, with its high
power densities, GaN has the potential to expand into other
areas, including high-power broadcast applications, where
solid-state power amplifiers built with vacuum tubes are still
the norm.
NXP’s first GaN broadband power amplifiers are expected
to be available in 2010, with Switch Mode Power Amplifiers
(SMPAs) following quickly thereafter.
Assembly of GaN power bar in standard ceramic package
Performance (targets)
Saturated output power at 50 V
Frequency
Maximum PAE
Linear power gain
2C-WCDMA linear efficiency with DPD
100 W
2.2 GHz
68%
19 dB
40% at –52 dBc IM3 at 8 dB OPBO