BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 59

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

BLF881
The transistor is based on NXP’s new 50V LDMOS technology,
and features 140 W RF output power for broadcast transmitter
and industrial applications. An unmatched device, the BLF881
can be used in the HF to 1 GHz range. The excellent
ruggedness and broadband performance of this device makes
it ideal for digital transmitter applications – either stand alone
or as a driver in combination with the high-power transistor
BLF888.
The BLF881 is also available in an earless version: BLF881S,
enabling an even more compact PCB design.
BLF888
Also based on the new 50 V technology created by NXP, the
BLF888 is the most powerful LDMOS broadcast transistor
to date. The 500 W LDMOS device is specifically designed
for digital broadcast transmitter applications. The transistor
delivers 110 W average power for a DVB-T signal over the full
UHF band from 470 MHz to 860 MHz. The excellent efficiency
and ruggedness of this device makes it ideal as the final stage
for advanced digital transmitter applications
Key benefits
` 50 V operations to achieve highest power levels in the
` Best-in-class ruggedness designed into all devices
` Best broadband efficiency
` Best-in-class design support
` Very low thermal resistance design for unrivalled reliability
Key applications
` Analogue and digital TV transmitters
2.13
The BLF881 / BLF888 transistor line-up enables today’s most powerful and
efficient digital broadcast transmitter applications
BLF881(S)
BLF888
Device
market
Digital broadcasting at its best
470 - 860
470 - 860
(MHz)
0 - 1000
0 - 1000
f
range
P
120
250
110
L(AV)
W
30
n
%
48
31
46
31
D
dB
G
21
21
19
19
p
@V
50
50
50
50
V
DS
operation
Mode of
2-TONE
2-TONE
DVB-T
DVB-T
TV exciter
DVB-T
amplifiers
harmonic
NXP Semiconductors RF Manual 14
filter
monitor
power
Driver stages
typ. 5 kW DVB-T
output power
8 × final
typ. 0.5 kW
DVB-T
th
edition
brb339
61